Constant current semiconductor device

Details Constant current semiconductor device Constant current semiconductor device

1989-08-24

1990-04-03

Laroche, Eugene R.

357 22, 357 3, H01L 2961, H01L 29205, H01L 2980

Patent

active

049144898

ABSTRACT:
A constant current semiconductor device includes a first semiconductor active layer and a second semiconductor active layer which is of a different material from the first active layer and forms a heterojunction together with the first active layer. An intervalley energy difference .DELTA.E.sub.1 of the first active layer which is a difference in energy between bottoms of L and .GAMMA. valleys of the conduction band of the first active layer, is different from an intervalley energy difference .DELTA.E.sub.2 of the second active layer which is a difference in energy between bottoms of L and .GAMMA. valleys of the conduction band of the second active layer. A current saturating voltage at which a current passing through the semiconductor devce is saturated, is set so as to be equal to or greater then .DELTA.E.sub.2 /e, where e is an absolute value of charge of an electron.

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