Constant-current circuit for logic circuit in integrated semicon

Electricity: power supply or regulation systems – Self-regulating – Using a three or more terminal semiconductive device as the...

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323316, 327530, 327543, G05F 316, G05F 110, G05F 302, H02J 338

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active

060231572

ABSTRACT:
According to the present invention, a first voltage is generated at a drain of a first MESFET by a first stage circuit that includes a plurality of diode elements and the first MESFET with its gate and drain connected together provided between power sources. The first voltage is applied to a gate of a second MESFET that performs a source follower operation so that a constant second voltage, which is lower by the equivalent of a threshold voltage than the first voltage, is generated at the source. A third MESFET with a diode connection is provided between the second voltage source and a lower power source, and a bias voltage is generated at the drain terminal of the third MESFET. The bias voltage is supplied to the gate of a constant-current transistor, the source of which is connected to the lower power source. The current of the constant-current transistor is supplied to an SCFL circuit, the source of which is connected for common use.

REFERENCES:
patent: 4150309 (1979-04-01), Tokuda
patent: 4282477 (1981-08-01), Ahmed
patent: 4507600 (1985-03-01), Okayama
patent: 5422563 (1995-06-01), Pflueger
patent: 5512855 (1996-04-01), Kimura
patent: 5587655 (1996-12-01), Oyabe et al.
patent: 5627461 (1997-05-01), Kimura
patent: 5818211 (1998-10-01), Narusawa et al.

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