Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Patent
1996-07-26
1998-12-01
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
257780, 257781, H01L 2348, H01L 2352, H01L 2940
Patent
active
058443177
ABSTRACT:
A semiconductor structure and method of fabrication are provided in which permanent external electrical connection to active circuitry in the structure can be made through either a wire bond pad or metal bump formed thereon. A final metallization including a wire bond pad is disposed over and electrically connected with the active circuitry. An insulating material film is disposed over the final metallization leaving the wire bond pad and a portion of the final metallization laterally displaced from the pad exposed. A metal bump contacts the laterally displaced exposed portion of the final metallization. The wire bond pad is electrically coupled with and laterally displaced from the metal bump through the final metallization. The metal bump and wire bond pad are configured to facilitate electrical connection of the semiconductor structure with an external connector, such as a modular packaging substrate. The structure may also be used for testing and burning in a semiconductor die without direct physical contact of the external testing device to the wire bond pad.
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Bertolet Allan
Fiore James
Gramatski Eberhard
Clark S. V.
International Business Machines - Corporation
Saadat Mahshid
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