Consistent alignment mark profiles on semiconductor wafers using

Details Consistent alignment mark profiles on semiconductor wafers using Consistent alignment mark profiles on semiconductor wafers using

1997-09-08

1999-07-20

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

438462, 257797, H01L 2176

Patent

active

059267208

ABSTRACT:
Provided is a method and composition for obtaining consistent alignment mark profiles with both detectibiliy and detection accuracy for use in conjunction with CMP planarization processes in semiconductor fabrication. The method involves physical vapor deposition of metal over an angled, metal-lined alignment mark trench in the surface of a semiconductor wafer following wafer planarization by CMP. The shape of the trench creates a shadowing effect which produces minimal deposition in the angled region of the trench and overcomes asymmetric metal loss due to attack from slurry accumulating in the trench during CMP. The result is the formation of a reliable and reproducible alignment mark.

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Wolf et al. "Silicon Processing for the VLSI Era vol. 1-Process Technology" p. 198 Lattice Press, Sunset Beach CA USA, 1986.

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