Consistent alignment mark profiles on semiconductor wafers using

Details Consistent alignment mark profiles on semiconductor wafers using Consistent alignment mark profiles on semiconductor wafers using

1997-09-08

1999-10-12

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

H01L 2176

Patent

active

059666137

ABSTRACT:
Provided is a method and composition for protecting alignment mark trench walls from attack by CMP slurry accumulating in an alignment mark trench during CMP processing. In a preferred embodiment, a metal organic chemical vapor deposition titanium nitride (MOCVDTiN) layer is deposited over a conventionally applied bulk tungsten layer prior to commencing CMP operations. This MOCVDTiN layer is resistant to CMP slurry attack. As a result, the tungsten trench profile remains a consistent and reliable alignment mark.

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