Connection structure semiconductor chip and electronic...

Details Connection structure semiconductor chip and electronic... Connection structure semiconductor chip and electronic...

2006-07-26

2011-12-27

Nguyen, Ha Tran T (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257SE23040, C257SE23041, C257SE23062, C257S692000, C257S700000, C257S750000, C257S762000, C257S771000

Reexamination Certificate

active

08084861

ABSTRACT:
Connection structure (5) for attaching a semiconductor chip (2) to a metal substrate (4) is provided which has a plurality of electrically conducting layers (11, 12, 13, 14) arranged in a stack. The stack has a contact layer (11) for providing an ohmic contact to a semiconductor chip (2), at least one mechanical decoupling layer (12) for mechanically decoupling the semiconductor chip (2) and the metal substrate (4), at least one diffusion barrier layer (13) and a diffusion solder layer (14) for providing a diffusion soldered mechanical bond and an electrical connection to a metal substrate (4). The mechanical decoupling layer (12) is positioned in the stack between the diffusion barrier layer (13) and the contact layer (11).

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European Search Report and Written Opinion fro European Application No. EP 05 01 6387 (8 pages), Dec. 20, 2005.

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