Connection structure, electro-optical device, and method for...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration

Reexamination Certificate

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Details

C257S072000, C257S773000, C257SE23141, C257SE23143, C257SE23145, C257SE23152, C257SE23151, C438S637000, C438S629000

Reexamination Certificate

active

08072080

ABSTRACT:
The invention provides a connection structure including: a first electro-conductive film that is formed on a substrate; an insulation film that is formed on the first electro-conductive film, an end surface of the insulation film facing in a direction in which an end surface of the first electro-conductive film faces; and a second electro-conductive film that extends from the upper surface of the insulation film to reach the end surface of the first electro-conductive film across the end surface of the insulation film, the second electro-conductive film being electrically connected to the first electro-conductive film via the end surface of the first electro-conductive film.

REFERENCES:
patent: 5424575 (1995-06-01), Washio et al.
patent: 6909487 (2005-06-01), Eguchi
patent: 2004/0135952 (2004-07-01), Kurashina et al.
patent: 2004/0195573 (2004-10-01), Kim
patent: 2006/0243977 (2006-11-01), Yamasaki
patent: 2686095 (2005-03-01), None
patent: 06-034990 (1994-02-01), None
patent: 11-003938 (1999-01-01), None
patent: 2006-228944 (2006-08-01), None
patent: 2007-000986 (2007-01-01), None

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