Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2007-12-21
2011-12-06
Richards, N Drew (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S072000, C257S773000, C257SE23141, C257SE23143, C257SE23145, C257SE23152, C257SE23151, C438S637000, C438S629000
Reexamination Certificate
active
08072080
ABSTRACT:
The invention provides a connection structure including: a first electro-conductive film that is formed on a substrate; an insulation film that is formed on the first electro-conductive film, an end surface of the insulation film facing in a direction in which an end surface of the first electro-conductive film faces; and a second electro-conductive film that extends from the upper surface of the insulation film to reach the end surface of the first electro-conductive film across the end surface of the insulation film, the second electro-conductive film being electrically connected to the first electro-conductive film via the end surface of the first electro-conductive film.
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Maschoff Gilmore & Israelsen
Richards N Drew
Seiko Epson Corporation
Sun Yu-Hsi D
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