Connection structure between components for semiconductor appara

Details Connection structure between components for semiconductor appara Connection structure between components for semiconductor appara

1988-06-28

1991-04-23

Jackson, Jr., Jerome

357 67, 357 74, 357 80, 357 71, H01L 2348, H01L 2302, H01L 3902, H01L 2944

Patent

active

050103881

ABSTRACT:
A connection structure between lead frames and a base plate of aluminum nitride, to be applied as a connection structure between components of a semiconductor apparatus, has a base plate made of a sintered body of aluminum nitride on which a semiconductor device is to be mounted. The lead frames are made of iron alloy containing nickel in 29 wt. % and cobalt in 17 wt. %. A silver solder is used for joining the base plate and the lead frames. A surface of the lead frame to be joined to the base plate is clad with a stress relief layer of oxygen-free copper of a high plastic deformability to relieve, by its plastic deformation, a thermal stress caused by a difference between a thermal expansion coefficient of the aluminum nitride base plate and that of the lead frame in a cooling process at the time of soldering. Preferably, only a portion of each lead frame to be joined to the base plate comprises an inner layer of an iron alloy containing 29 wt. % of nickel and 17 wt. % of cobalt, and an outer layer portion of oxygen-free copper.

REFERENCES:
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patent: 4761345 (1988-08-01), Sato et al.
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MIL-STD-883B of Aug. 31, 1977; Method 2004.3.

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