Connection layer forming method

Details Connection layer forming method Connection layer forming method

1996-04-08

1998-08-18

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438691, 438694, 438697, 438700, 438701, 438702, 438703, 438706, 438710, 438712, 438713, 438717, 438734, H01L 21465

Patent

active

057958254

ABSTRACT:
A method of forming a connection layer by filling an Al-based material wherein planarization of an entire surface of a substrate is achieved. 1 Al-based material 10 is deposited and filled in concave sections 4,8 formed in a substrate 1 under a high temperature, and then the surface of the Al-base material is polished with unwoven cloth or an etching liquid. 2 In a lithography process using an alignment mark for alignment on a substrate, an Al-based material is deposited and filled in a concave section in a portion other than the alignment mark for alignment under a high temperature, and then the surface of the Al-based material is polished. 3 In a process to deposit an Al-based material on a substrate and then planarize the surface of the Al-based material by polishing, an antireflection film is deposited on the Al-based material after the Al-based material is planarized.

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