Semiconductor device manufacturing: process – Making regenerative-type switching device
Reexamination Certificate
2011-06-14
2011-06-14
Stark, Jarrett J (Department: 2823)
Semiconductor device manufacturing: process
Making regenerative-type switching device
C257S002000, C257S004000, C438S381000
Reexamination Certificate
active
07960216
ABSTRACT:
Confinement techniques for non-volatile resistive-switching memories are described, including a memory element having a first electrode, a second electrode, a metal oxide between the first electrode and the second electrode. A resistive switching memory element described herein includes a first electrode adjacent to an interlayer dielectric, a spacer over at least a portion of the interlayer dielectric and over a portion of the first electrode and a metal oxide layer over the spacer and the first electrode such that an interface between the metal oxide layer and the electrode is smaller than a top surface of the electrode.
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Intermolecular, Inc.
Stark Jarrett J
Tobergte Nicholas
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