Confinement of secondary electrons in plasma ion processing

Details Confinement of secondary electrons in plasma ion processing Confinement of secondary electrons in plasma ion processing

1993-08-27

1996-03-12

Kunemund, Robert

Coating apparatus

Gas or vapor deposition

With treating means

118723ER, 118723HC, 118719, C23C 1600

Patent

active

054982901

ABSTRACT:
A plasma ion implantation apparatus includes a vacuum chamber that receives the object within its walls. The object is supported upon an electrically conductive base that is electrically isolated from the wall of the vacuum chamber. An electrically conductive enclosure is positioned between the object and the wall of the vacuum chamber and supported upon the base. The enclosure is made of an electrically conductive material. A plasma source is positioned so as to create a plasma in the vicinity of the object to be implanted. A voltage source applies an electrical voltage to the base and thence the enclosure relative to the wall of the vacuum chamber. Secondary electrons emitted from the object during implantation are reflected back into the plasma by the enclosure, reducing X-ray production and improving plasma efficiency.

REFERENCES:
patent: 4764394 (1988-08-01), Conrad
patent: 4925542 (1990-05-01), Kidd
patent: 5218179 (1993-06-01), Matossian et al.
patent: 5330800 (1994-07-01), Schumacher et al.
patent: 5354381 (1994-10-01), Sheng
patent: 5374456 (1994-12-01), Matossian

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