Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2011-06-28
2011-06-28
Lindsay, Jr., Walter L (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C438S151000, C257SE33066
Reexamination Certificate
active
07968895
ABSTRACT:
A method for forming a conductor structure is provided. The method comprises: (1) providing a substrate; (2) forming a patterned dielectric layer with a first opening which exposes a portion of the substrate; forming a patterned organic material layer on the dielectric layer with a second opening which corresponds to the first opening and expose the exposed portion of the substrate; (3) forming a first barrier layer on the organic material layer and the exposed portion of the substrate; (4) forming a metal layer on the first barrier layer; and (5) removing the organic material layer, the first barrier layer thereon and the metal layer thereon.
REFERENCES:
patent: 3849136 (1974-11-01), Grebe
patent: 4460738 (1984-07-01), Frentzel et al.
patent: 4640738 (1987-02-01), Fredericks et al.
patent: 5275695 (1994-01-01), Chang et al.
patent: 5300813 (1994-04-01), Joshi et al.
patent: 5766446 (1998-06-01), Spindt et al.
patent: 5930610 (1999-07-01), Lee
patent: 6335569 (2002-01-01), Joshi
patent: 6500566 (2002-12-01), Smith
patent: 7109119 (2006-09-01), Bao et al.
patent: 7221012 (2007-05-01), Chu et al.
patent: 2002/0006336 (2002-01-01), Kato et al.
patent: 2005/0179040 (2005-08-01), Tanaka
patent: 2006/0223329 (2006-10-01), Martin et al.
patent: 2006/0284254 (2006-12-01), Liu et al.
patent: 2007/0069200 (2007-03-01), Lumbard
patent: 53104185 (1978-09-01), None
patent: 11-261099 (1999-09-01), None
patent: 2002-170881 (2002-06-01), None
patent: 2006-278155 (2006-10-01), None
patent: 436995 (2001-05-01), None
patent: 200539264 (2005-12-01), None
patent: I271867 (2007-01-01), None
patent: I281586 (2007-05-01), None
English language translation of abstract of JP 53104185, Sep. 11, 1978.
Taiwan Notice of Allowance mailed Jan. 28, 2011.
English translation of abstract of TW 436995, May 28, 2001.
English translation of abstract of TW200539264A, Dec. 1, 2005.
English translation of abstract of JP2006-278155A, Oct. 12, 2006.
English translation of abstract of JP11-261099A, Sep. 24, 1999.
Chen Chienhung
Lin Hantu
AU Optronics Corp.
Lindsay, Jr. Walter L
Thomas Kayden Horstemeyer & Risley LLP
LandOfFree
Conductor structure, pixel structure, and methods of forming... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Conductor structure, pixel structure, and methods of forming..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Conductor structure, pixel structure, and methods of forming... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2697498