Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1996-04-08
1999-05-11
Everhart, Caridad
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
438688, 148439, 148440, H01L29/43
Patent
active
059030550
ABSTRACT:
A conductor line material is provided which has an extremely low electric resistance such as 10 .mu..OMEGA..multidot.cm or less, and in preferred embodiments, about 5 .mu..OMEGA..multidot.cm, which causes no defect such as hillocks and pinholes even at high temperatures, and which easily forms strong insulation films by anodic oxidation. An Al-based conductor line material comprising an alloy whose composition formula is substantially expressed by Al.sub.x (M.sub.y N.sub.1-y).sub.1-x, where M represents at least one element selected from a group consisting of rare-earth elements, N represents at least one element selected from a group consisting of Nb, Zr and Ta, x is between 98 and 99.5 atomic percent, and y is a number between 0.1 and 0.9, wherein an intermetallic compound of Al with said element represented by M or N is deposited in the matrix by subsequent heat treatment. The same object may be achieved by an alloy of Al to which 0.5-2.0 atomic percent Nb is added. The temperature of heat treatment in both cases is preferably in a range between 250 and 450.degree. C.
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Drumheller Ronald L.
Everhart Caridad
International Business Machines - Corporation
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