Conductor fill reflow with intermetallic compound wetting layer

Details Conductor fill reflow with intermetallic compound wetting layer Conductor fill reflow with intermetallic compound wetting layer

1994-12-22

1997-12-02

Kunemund, Robert

Fishing, trapping, and vermin destroying

437174, 437194, 437197, 148DIG3, H01L 2144

Patent

active

056935641

ABSTRACT:
A conductor fill technique uses an intermetallic compound wetting layer to allow a subsequent conductive material to be reflowed with minimized interaction between the conductive layer and the wetting layer. As one example, a wetting layer including TiAl or TiAl.sub.3 may be formed over a semiconductor wafer and in an opening of the wafer. A conductive layer including aluminum (Al) may then be deposited and reflowed over the wafer to fill the opening in forming a contact, via, or interconnect line, for example, with minimized interaction between the aluminum (Al) of the conductive layer and the wetting layer. Any reduction in conductance of the material filled in the opening may be minimized as the formation of any new intermetallic TiAl.sub.3 compounds that would otherwise increase the resistance of the material filled in the opening is minimized. Relatively denser and/or smaller-sized semiconductor devices may be fabricated with conductors that benefit from the relatively lower resistance of aluminum (Al) as aluminum (Al) may be used to fill relatively smaller openings with minimized reduction in conductance.

REFERENCES:
patent: 4141020 (1979-02-01), Howard et al.
patent: 5423939 (1995-06-01), Bryant et al.
patent: 5443995 (1995-08-01), Nulman
patent: 5472912 (1995-12-01), Miller
"Multiple Metal Film Structures for Wiring VLSI Circuit Chips," IBM Technical Disclosure Bulletin, vol. 33, No. 1A, pp. 15-16 (Jun. 1990).
"Refractory Intermetallic Compounds for Local Interconnections," IBM Technical Disclosure Bulletin, vol. 33, No. 2, p. 416 (Jul. 1990).
"Elaboration of a Large Grain Layer to Protect Barrier Layers," IBM Technical Disclosure Bulletin, vol. 33, No. 10B, pp. 75-76(Mar. 1991).
"Process to make High-Aspect-Ratio Vias Using the Al(Ge) Reflow Process With Good Electromigration Resistance," IBM Technical Disclosure Bulletin, vol. 36, No. 1, p. 443 (Jan. 1993).
Wolf, S., et al., Silicon Processing for the VLSI Era, Volume 1: Process Technology, Lattice Press, Sunset Beach, California, pp. 332-334, 367-373 (1986).
Wolf, S., Silicon Processing for the VLSI Era, Volume 2: Process Integration, Lattice Press, Sunset Beach, California, pp. 121-131, 191, 240-242, 254-256, 264-267 (1990).

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