Coating processes – Electrical product produced – Condenser or capacitor
Patent
1980-12-08
1982-03-30
Smith, John D.
Coating processes
Electrical product produced
Condenser or capacitor
204192C, 204192SP, 427 91, 427 93, 427125, 4271261, 4272552, 4273839, H01L 2124, H01L 21285
Patent
active
043224539
ABSTRACT:
A highly conductive layer utilizing a layer of Pt in conjunction with sputter deposited or co-evaporated WSi.sub.2 to enahnce the conductivity increase of the WSi.sub.2 layer occuring during annealing. The Pt layer is deposited as a thin layer directly on top or beneath the WSi.sub.2 layer or may be incorporated within the WSi.sub.2 layer. During annealing platinum atoms diffuse into the WSi.sub.2 film resulting in lower resistivity values than in comparably deposited annealed film wherein the Pt layer has been omitted.
REFERENCES:
patent: 4180596 (1979-12-01), Crowder et al.
patent: 4218291 (1980-08-01), Fukuyama et al.
Mohammadi et al. "Properties of Sputtered Tungsten Silicide for MOS Integrated Circuit Applications", J. Electrochem Soc.: Solid-State Science _and Technology, vol. 127, No. 2, Feb. 1980, pp. 450-454.
Sinha, "Electrical Characteristics and Thermal Stability of Platinum Silicide-to-Silicon Ohmic Contacts Metallized with Tungsten" J. Electrochem. Soc: Solid State Science and Technology, vol. 120, No. 12, Dec. 1973, pp. 1767-1771.
International Business Machines - Corporation
Smith John D.
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