Conductivity WSi.sub.2 films by Pt preanneal layering

Details Conductivity WSi.sub.2 films by Pt preanneal layering Conductivity WSi.sub.2 films by Pt preanneal layering

1981-11-04

1984-04-24

James, Andrew J.

357 67, 357 65, H01L 2348, H01L 2946, H01L 2962, H01L 2964

Patent

active

044451342

ABSTRACT:
A highly conductive layer utilizing a layer of Pt in conjunction with sputter deposited or co-evaporated WSi.sub.2 to enhance the conductivity increase of the WSi.sub.2 layer occuring during annealing. The Pt layer is deposited as a thin layer directly on top or beneath the WSi.sub.2 layer or may be incorporated within the WSi.sub.2 layer. During annealing platinum atoms diffuse into the WSi.sub.2 film resulting in lower resistivity values than in comparably deposited annealed film wherein the Pt layer has been omitted.

REFERENCES:
patent: 3906540 (1975-09-01), Hollins
patent: 4285761 (1981-08-01), Fatula, Jr. et al.
patent: 4329706 (1982-05-01), Crowder et al.
A. K. Sinha, "Electrical Characteristics and Thermal Stability of Platinum Silicide-to-Silicon Ohmic Contacts Metalized with Tungsten," Journal of the Electrochemical Society, vol. 120, No. 7, Jul. 1973, pp. 1767-1771.

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