Conductivity of silicon nitride

Details Conductivity of silicon nitride Conductivity of silicon nitride

1975-06-12

1976-05-11

Padgett, Benjamin R.

Compositions

Electrically conductive or emissive compositions

423349, H01B 100, C01B 3302

Patent

active

039561933

ABSTRACT:
An electrically conducting artefact is produced by heating a silicon nitride artefact to a temperature high enough to decompose part of the silicon nitride to silicon but not high enough to evaporate the silicon which is formed, the heating taking place either in an environment which is inert to silicon or in a carbon containing environment which reacts with the silicon formed to give silicon carbide. Such an artefact has electrical conductivity properties which may, for example, be retained after heating at about 600.degree.C in air for several hours.

REFERENCES:
patent: 3052814 (1962-09-01), Edwards et al.
patent: 3101257 (1963-08-01), Hagen et al.
patent: 3175918 (1965-03-01), McGahan et al.
patent: 3236673 (1966-02-01), O'Connor et al.
patent: 3275415 (1966-09-01), Chang et al.
patent: 3389022 (1968-06-01), Kravitz
patent: 3758672 (1973-09-01), Lewis

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