Conductivity modulation type semiconductor device and method for

Details Conductivity modulation type semiconductor device and method for Conductivity modulation type semiconductor device and method for

1990-10-03

1992-07-07

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG12, H01L 21225

Patent

active

051282771

ABSTRACT:
A conductivity modulation type semiconductor device comprises a semiconductor anode substrate of a P type having two surfaces, a semiconductor substrate of an N type having two surfaces, the semiconductor substrate having a high impurity layer-like region on one surface thereof and a low concentration drain region on the other surface thereof, a body region of P type formed in the drain region and exposed at one surface of the semiconductor substrate, source regions of an N type formed in the body region and exposed at the other surface of the semiconductor substrate, and a gate layer formed within the isulating layer, which extends between the source and drain regions, on the body region. The other surface of the anode substrate is polished and is intimately joined to the polished surface of the semiconductor substrate to form a junction layer therebetween.

REFERENCES:
patent: 3312880 (1967-04-01), Longo et al.
patent: 3324359 (1967-06-01), Gentry
patent: 3659334 (1972-05-01), Becke et al.
patent: 3886003 (1975-05-01), Takagi et al.
patent: 4364073 (1982-12-01), Becke et al.
patent: 4383268 (1983-05-01), Martinelli et al.
patent: 4441115 (1984-04-01), Dahlberg
patent: 4587713 (1986-05-01), Goodman et al.
patent: 4631564 (1986-12-01), Neilson et al.
patent: 4638552 (1987-01-01), Shimbo et al.
patent: 4639754 (1987-01-01), Wheatley, Jr. et al.
patent: 4738935 (1988-04-01), Shimbo et al.
patent: 4935386 (1990-06-01), Nakagawa et al.
Goodman et al, IEEE International Electron Device Meeting; Technical Digest, Dec. 4, 1983, pp. 79-82 (exr's personal copy).
Shimbo, M., et al, "Silicon-to-Silicon Direct Bonding Method", J. Appl. Phys. 60(8) Oct. 1986, pp. 2987-2989.
Furukawa, K., "Lattice Configuration and Electrical Properties of the Interface of Direct Bonded Silicon", Extended Abstracts 18th(1986) Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 533-536.

Affiliated with

Also associated with

Rating

Conductivity modulation type semiconductor device and method for does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Conductivity modulation type semiconductor device and method for, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Conductivity modulation type semiconductor device and method for will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1829489