Conductivity modulation type MOSFET

Details Conductivity modulation type MOSFET Conductivity modulation type MOSFET

1990-01-22

1991-06-18

Wimer, Michael C.

357 38, 357 39, 357 63, H01L 2978

Patent

active

050252933

ABSTRACT:
A conductivity modulation MOSFET having a second buffer layer is disclosed. The second buffer layer is thinner and has a higher impurity concentration than the first buffer layer. The second buffer layer is interspersed with heavy metal atoms such as gold and platinum that facilitate recombination of holes and electrons thereby shortening turn off time. However, because of the relative thinness of the second layer compared to the first layer, the second layer has almost no influence in increasing ON resistance.

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patent: 4972239 (1990-11-01), Mihara
patent: 4985741 (1991-01-01), Bauer et al.

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