Conductivity modulation type MISFET and a control circuit thereo

Details Conductivity modulation type MISFET and a control circuit thereo Conductivity modulation type MISFET and a control circuit thereo

1992-05-28

1993-09-14

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257146, 257154, 257163, 257167, 257175, 257331, 257334, 257337, 257378, 257379, H01L 2910, H01L 2978, H01L 2974

Patent

active

052452026

ABSTRACT:
A conductivity modulation type MISFET, and a control circuit thereof are provided. A semiconductor device 1 comprises a conductivity modulation type MOSFET 1a and a built-in MOSFET 1b which is designed to control a source electrode 12a and a control electrode 13 of a parasitic transistor to be in a short state or an open state, said conductivity modulation type MOSFET 1a having a polysilicon gate 6 on an obverse surface of n.sup.- -type conductivity modulation layer 4, a p-type channel diffusion area 7, n.sup.+ -type source diffusion area 8 and a parasitic transistor control electrode 13 conductively connected to the p-type channel diffusion area 7 through a p.sup.+ -type contact area 9.

REFERENCES:
patent: 4959703 (1990-09-01), Ogura et al.

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