Conductivity modulation semiconductor with no negative resistanc

Details Conductivity modulation semiconductor with no negative resistanc Conductivity modulation semiconductor with no negative resistanc

1988-08-09

1991-07-09

Hille, Rolf

357 238, 357 38, H01L 2978

Patent

active

050310097

ABSTRACT:
A conductivity modulation type Metal-Oxide Semiconductor Field Effect Transistor is disclosed having no negative resistance characteristics and which can withstand a high voltage and operate at a high speed. The semiconductor is constructed with a low density intermediate layer between a buffer layer and the silicon substrate. The density of the intermediate layer, lower than adjacent layers, induces minority carrier injection across the buffer layer thereby eliminating the negative resistance characteristic.

REFERENCES:
patent: 4639761 (1987-01-01), Singer et al.
patent: 4985741 (1991-01-01), Bauer et al.

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