Conductivity-modulation semiconductor

Details Conductivity-modulation semiconductor Conductivity-modulation semiconductor

1996-09-27

1997-09-09

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257212, 257337, H01L 2974, H01L 31111, H01L 2358, H01L 2976

Patent

active

056659881

ABSTRACT:
A plurality of minority carriers, which cause a conductivity modulation effect in a semiconductor device, are supplied from a separately disposed minority carrier injection region which is alternately connected to and separated from a drain region. The minority carriers are injected via the minority carrier injection region connected to the drain region during forward biasing. The minority carrier injection is stopped by separating the injection region from the drain region when the turn-off operation begins. This operation reduces the carriers that need to be swept off during a turn-off operation. The turn-off time is shortened in a bipolar semiconductor device, such as an IGBT with a reduced on-voltage, by utilizing the conductivity modulation to reduce switching loss.

REFERENCES:
patent: 4364073 (1982-12-01), Becke et al.
patent: 4901127 (1990-02-01), Chow et al.
patent: 4949142 (1990-08-01), Contiero
patent: 5060032 (1991-10-01), Ogawa et al.
patent: 5198688 (1993-03-01), Tsuchiya et al.
patent: 5245202 (1993-09-01), Yasukazu

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