Active solid-state devices (e.g. – transistors – solid-state diode – Conductivity modulation device
Patent
1991-04-18
1993-04-06
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Conductivity modulation device
257378, H01L 2974, H01L 2702, H01L 2910
Patent
active
052006328
ABSTRACT:
A conductivity modulation type MOSFET including a first region of a first conductivity type having a low impurity concentration, second regions of a second conductivity type selectively formed on the surface region of one side of the first region, third regions of the first conductivity type selectively formed on the surface region of the second regions, gate electrodes each formed above the surface region of the second region located between the first region and the third region, a plurality of gate insulating films interlayered between the gate electrodes and the surface region of the second regions, an emitter electrode in contact with both the second regions and the third regions, a fourth region of the second conductivity type having a high impurity concentration, formed adjoining to another side of the first region, fifth regions of the second conductivity type, selectively formed surrounding the fourth region, having a lower impurity concentration than that of the fourth region, and a collector electrode being in contact with both the fourth region and the fifth regions.
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Fuji Electric & Co., Ltd.
James Andrew J.
Meier Stephen D.
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