Conductivity-modulation metal oxide semiconductor field effect t

Details Conductivity-modulation metal oxide semiconductor field effect t Conductivity-modulation metal oxide semiconductor field effect t

1991-02-28

1992-12-01

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257147, 257154, H01L 2910

Patent

active

051683334

ABSTRACT:
A semiconductor device including a semiconductive substrate having first and second opposite surfaces; a thyristor formed on the substrate and including a base layer formed in the first surface of the substrate, a first emitter layer formed in the base layer, a conductive layer electrically connected to the emitter layer to serve as a cathode electrode, a first gate electrode connected to the base layer, a second emitter layer formed in the second surface of the substrate, a drain layer formed in the second emitter layer, a conductive layer for electrically connecting the second emitter layer with said drain layer and for serving as an anode electrode of said thyristor. A metal oxide semiconductor field effect transistor is provided to accelerate the flow of carriers in said thyristor to the anode electrode to turn off said thyristor. The metal oxide semiconductor field effect transistor has a conductive layer serving as a second gate electrode insulatively disposed above the second surface to cover a layer portion of the second emitter layer which is defined between the substrate and the drain layer.

REFERENCES:
patent: 4816892 (1989-03-01), Temple
patent: 4821083 (1989-04-01), Ogura et al.
patent: 4825270 (1989-04-01), Satou et al.

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