Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1991-02-28
1992-12-01
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257147, 257154, H01L 2910
Patent
active
051683334
ABSTRACT:
A semiconductor device including a semiconductive substrate having first and second opposite surfaces; a thyristor formed on the substrate and including a base layer formed in the first surface of the substrate, a first emitter layer formed in the base layer, a conductive layer electrically connected to the emitter layer to serve as a cathode electrode, a first gate electrode connected to the base layer, a second emitter layer formed in the second surface of the substrate, a drain layer formed in the second emitter layer, a conductive layer for electrically connecting the second emitter layer with said drain layer and for serving as an anode electrode of said thyristor. A metal oxide semiconductor field effect transistor is provided to accelerate the flow of carriers in said thyristor to the anode electrode to turn off said thyristor. The metal oxide semiconductor field effect transistor has a conductive layer serving as a second gate electrode insulatively disposed above the second surface to cover a layer portion of the second emitter layer which is defined between the substrate and the drain layer.
REFERENCES:
patent: 4816892 (1989-03-01), Temple
patent: 4821083 (1989-04-01), Ogura et al.
patent: 4825270 (1989-04-01), Satou et al.
Nakagawa Akio
Watanabe Kiminori
Yamaguchi Yoshihiro
Kabushiki Kaisha Toshiba
Mintel William
Potter Roy
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