Conductivity modulation buried gate trench type MOSFET

Details Conductivity modulation buried gate trench type MOSFET Conductivity modulation buried gate trench type MOSFET

1990-07-23

1991-07-16

Mintel, William

357 231, 357 234, 357 55, 357 59, H01L 2900, H01L 2701, H01L 2978, H01L 2906

Patent

active

050328883

ABSTRACT:
A conductivity modulation MOSFET with two base layers formed over a drain layer. A trench with a lower portion and an upper portion is formed in the second base layer. The lower portion of the trench has a fixed width, and the upper portion of the trench has a steadily increasing width relative to the lower portion. A gate is placed in the lower portion of the trench, while the source regions are formed in the second base region alongside the side walls of the upper trench portion.

REFERENCES:
patent: 4833516 (1989-05-01), Hwang et al.
patent: 4967245 (1990-10-01), Cogan et al.

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