Conductivity-modulated-type MOSFET

Details Conductivity-modulated-type MOSFET Conductivity-modulated-type MOSFET

1995-03-02

1996-07-02

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

257258, 257327, 257368, 257378, H01L 2976, H01L 2980, H01L 2994

Patent

active

055325025

ABSTRACT:
A conductivity-modulated-type MOSFET. A base layer is on a drain layer, and a first semiconductor region, having the opposite conductivity-type as the base layer, is in the base layer. An insulation layer is on the portion of the first semiconductor region, and a gate is on the insulation layer. A second semiconductor region, having the same conductivity type as the base layer is in the second semiconductor layer at a periphery of the MOSFET.

REFERENCES:
patent: 4914051 (1990-04-01), Huie et al.
patent: 5021861 (1991-06-01), Baliga
patent: 5146298 (1992-09-01), Eklund

Affiliated with

Also associated with

Rating

Conductivity-modulated-type MOSFET does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Conductivity-modulated-type MOSFET, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Conductivity-modulated-type MOSFET will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1508484