Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1993-08-13
1995-08-22
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257 66, 257 70, 257 73, 257144, 257152, 257270, 257328, 257341, H01L 21223, H01L 2974, H01L 2702
Patent
active
054442710
ABSTRACT:
Base regions of a second conductivity type are formed and spaced apart from one another in a first major surface of a semiconductor substrate of a first conductivity type which functions as a drain region. Source regions of the first conductivity type are formed in each of the base regions and spaced apart from one another. Gate insulating films are formed on portions of the drain region which are located between adjacent source regions. Gates are formed on the gate insulating films. Source electrodes are formed such that each electrode short-circuits one-base region to the source regions formed in the base region. A first anode region of the second conductivity type is formed on a second major surface of the semiconductor substrate. A second anode region of the second conductivity type is formed on the first anode region. This second anode region is made of polycrystalline silicon of the second conductivity type and has an impurity concentration higher than that of the first anode region. An anode electrode is formed on the second anode region.
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patent: 5171696 (1992-12-01), Hagino
IEEE, 1989, G. Miller, et al., "A New Concept for a Non Punch Through IGBT with MOSFET Like Switching Characteristics", pp. 21-24.
IEEE Electron Device Letters, vol. EDL-7, No. 9, Sep. 1986, Di-Son Kuo, et al., "Optimization of Epitaxial Layers for Power Bipolar-MOS Transistor", pp. 510-512.
IEEE Electron Device Letters, vol. EDL-4, No. 12, Dec. 1983, B. J. Baliga, "Fast-Switching Insulated Gate Transistors", pp. 452-454.
Kabushiki Kaisha Toshiba
Saadat Mahshid D.
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