Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1991-11-27
1994-02-15
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257212, 257394, H01L 2910, H01L 2978
Patent
active
052869849
ABSTRACT:
A conductivity modulated MOSFET, having a semiconductor substrate of a first conductivity type, a semiconductor layer of a second conductivity type formed on the semiconductor substrate and having a high resistance, a base layer of the first conductivity type formed in the semiconductor layer, a source layer of the second conductivity type formed in the base layer, a gate electrode formed on a gate insulating film which is formed on a channel region, the channel region being formed in a surface of the base layer between the semiconductor layer and the source layer, a source electrode ohmic-contacting the source layer and the base layer, and a drain electrode formed on the surface of the semiconductor substrate opposite to the semiconductor layer, characterized in that the conductivity modulated MOSFET has a saturation current smaller than a latch-up current when a predetermined gate voltage is applied to the gate electrode.
REFERENCES:
patent: 4364073 (1982-12-01), Becke et al.
patent: 4672407 (1987-06-01), Nakagawa et al.
patent: 4782372 (1988-11-01), Nakagawa et al.
patent: 4881120 (1989-11-01), Nakagawa et al.
patent: 5086323 (1992-02-01), Nakagawa et al.
Chang, M. F., et al., "25 Amp, 500 Volt Insulated Gate Transistors," IEDM 83, 1983.
Nakagawa Akio
Ohashi Hiromichi
Thukakoshi Thuneo
Watanabe Kiminori
Yamaguchi Yoshihiro
Crane Sara W.
Kabushiki Kaisha Toshiba
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