Conductivity modulated MOSFET

Details Conductivity modulated MOSFET Conductivity modulated MOSFET

1989-04-18

1990-02-13

Edlow, Martin H.

357 2313, 357 42, 357 43, 357 59, H01L 2978

Patent

active

049011243

ABSTRACT:
A conductivity modulated MOSFET is composed of a MOSFET formed according to SOI technique utilizing two polycrystalline silicon layers deposited on a semiconductor substrate through an oxide film, and a vertical bipolar transistor formed within the semiconductor substrate. Therefore, electrons and positive holes pass through different passages respectively, and any parasitic thyristor is not formed as in the conventional conductivity modulated MOSFET with a MOSFET built in the semiconductor substrate, and thus there is no possibility of causing the latch up phenomenon.

REFERENCES:
patent: 4072975 (1978-02-01), Ishitani
patent: 4633438 (1986-12-01), Kame et al.
patent: 4646123 (1987-02-01), Lynch et al.
patent: 4670768 (1987-06-01), Sunami et al.
patent: 4797724 (1989-01-01), Boles et al.
patent: 4799095 (1989-01-01), Baliga
patent: 4823172 (1989-04-01), Mihara
patent: 4831424 (1989-05-01), Yoshida et al.
Nakagawa, "Safe Operating Area for 1200-V Nonlatchup Bipolar-Mode MOSFET's", Transactions on Electron Drvices, vol. ED-34, No. 2, Feb. 87.

Affiliated with

Also associated with

Rating

Conductivity modulated MOSFET does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Conductivity modulated MOSFET, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Conductivity modulated MOSFET will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1171958