Conductivity modulated MOSFET

Details Conductivity modulated MOSFET Conductivity modulated MOSFET

1989-06-19

1990-11-20

James, Andrew J.

357 59, 357 91, 357 64, H01L 2978

Patent

active

049722395

ABSTRACT:
A conductivity modulated MOSFET is composed of a p.sup.+ anode layer, a second n base layer formed on the anode layer for reducing the device's on resistance by conductivity modulation due to holes injected from the anode layer, an n type doped recombination layer such as an n type doped polycrystalline silicon layer formed on the second base layer for preventing latch-up by promoting recombination of holes with electrons, a first n base layer formed on the recombination layer for serving virtually as a drain, a p channel region formed in the first base layer, an n.sup.+ source region formed in the channel region, and an insulated gate electrode.

REFERENCES:
patent: 4259683 (1981-03-01), Adler et al.
patent: 4364073 (1982-12-01), Becke et al.
patent: 4620211 (1986-10-01), Baliga
patent: 4639761 (1987-01-01), Singer
patent: 4680604 (1987-07-01), Nakagawa
patent: 4684413 (1987-08-01), Goodman
A. Mogro-Campero et al., "Shorter Turn-Off Times in Insulated Gate Transistors by Proton Implantation", IEEE Electron Device Letters, vol. EDL-6, No. 5, May 85, pp. 244-226.

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