1991-06-10
1992-02-04
James, Andrew J.
357 38, 357 86, H01L 2910, H01L 2978
Patent
active
050863231
ABSTRACT:
A conductivity modulated MOSFET, having a semiconductor substrate of a first conductivity type, a semiconductor layer of a second conductivity type formed on the semiconductor substrate and having a high resistance, a base layer of the first conductivity type formed in the semiconductor layer, a source layer of the second conductivity type formed in the base layer, a gate electrode formed on a gate insulating film which is formed on a channel region, the channel region being formed in a surface of the base layer between the semiconductor layer and the source layer, a source electrode ohmic-contacting the source layer and the base layer, and a drain electrode formed on the surface of the semiconductor substrate opposite to the semiconductor layer, characterized in that the conductivity modulated MOSFET has a saturation current smaller than a latch-up current when a predetermined gate voltage is applied to the gate electrode.
REFERENCES:
patent: 4072975 (1978-02-01), Ishitani
patent: 4612565 (1986-09-01), Shimizu et al.
patent: 4641162 (1987-02-01), Yilmaz
Sze, S. M., Semiconductor Devices: Physics & Technology, John Wiley, 1985, p. 205.
Chang et al., "25 AMP, 500 Volt Insulated Gate Transistors", 1983 IEEE IEDM, pp. 83-86.
Sze, S. M., Semiconductor Devices, Physics and Technology, John Wiley, 1985, p. 483.
Nakagawa Akio
Ohashi Hiromichi
Thukakoshi Thuneo
Watanabe Kiminori
Yamaguchi Yoshihiro
Crane Sara W.
James Andrew J.
Kabushiki Kaisha Toshiba
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