1988-01-21
1992-03-03
James, Andrew J.
357 37, 357 38, H01L 2978
Patent
active
050937014
ABSTRACT:
A conductivity modulated MOSFET, having a semiconductor substrate of a first conductivity type, a semiconductor layer of a second conductivity type formed on the semiconductor substrate and having a high resistance, a base layer of the first conductivity type formed in the semiconductor layer, a source layer of the second conductivity type formed in the base layer, a gate electrode formed on a gate insulating film which is formed on a channel region, the channel region being formed in a surface of the base layer between the semiconductor layer and the source layer, a source electrode ohmic-contacting the source layer and the base layer, and a drain electrode formed on the surface of the semiconductor substrate opposite to the semiconductor layer, characterized in that the conductivity modulated MOSFET has a saturation current smaller than a latch-up current when a predetermined gate voltage is applied to the gate electrode.
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Nakagawa Akio
Ohashi Hiromichi
Thukakoshi Thuneo
Watanabe Kiminori
Yamaguchi Yoshihiro
Crane Sara W.
James Andrew J.
Kabushiki Kaisha Toshiba
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