Conductivity modulated metal oxide semiconductor field effect tr

Details Conductivity modulated metal oxide semiconductor field effect tr Conductivity modulated metal oxide semiconductor field effect tr

1988-09-20

1990-02-13

Wojciechowicz, Edward J.

357 233, 357 234, 357 2314, H01L 2702

Patent

active

049011316

ABSTRACT:
In a conductivity modulated MOS FET which is provided in a separating region between a semiconductor substrate of a conduction type and an epitaxial layer of a different conduction type grown on the semiconductor substrate, a first buried layer of the different conduction type and a second buried layer of the conduction type are on a boundary region between the semiconductor substrate and the epitaxial layer, and a drain region of the conduction type is in the epitaxial layer to be extended from the upper surface thereof to the bottom surface thereof, such that the drain region is in contact with the second buried layer which is separated from the semiconductor substrate. This structure allows the increase of drain current whereby the efficiency of area is improved.

REFERENCES:
patent: 4830973 (1989-05-01), Mastroianni

Affiliated with

Also associated with

Rating

Conductivity modulated metal oxide semiconductor field effect tr does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Conductivity modulated metal oxide semiconductor field effect tr, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Conductivity modulated metal oxide semiconductor field effect tr will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1172123