Conductivity modulated insulated gate semiconductor device

Details Conductivity modulated insulated gate semiconductor device Conductivity modulated insulated gate semiconductor device

1991-08-05

1993-01-12

Wojciechowicz, Edward J.

Active solid-state devices (e.g., transistors, solid-state diode

Conductivity modulation device

257378, 257408, 257577, 437 40, 437 44, 437 31, H01L 2910, H01L 21265

Patent

active

051783703

ABSTRACT:
A vertical conducting insulating gate bipolar transistor having an emitter region formed in a base region wherein the base region is not shorted to the emitter is provided. The emitter and base regions are formed in an upper portion of a lightly doped semiconductor drift region and an anode region is formed in a bottom portion of the drift region. During forward conduction, minority carriers are injected from the anode into the base region, biasing the base region sufficiently to inject minority carriers into the upper surface of the drift region. The injected minority carriers improve conductivity in the upper portion of the drift region.

REFERENCES:
patent: 5070377 (1991-12-01), Harada
patent: 5079607 (1992-01-01), Sakuri
patent: 5121176 (1992-06-01), Quigg

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