Conductivity modulated field effect transistor with optimized an

Details Conductivity modulated field effect transistor with optimized an Conductivity modulated field effect transistor with optimized an

1991-12-17

1993-05-18

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Conductivity modulation device

257342, 257471, 257737, 257784, H01L 2358, H01L 2976, H01L 27095, H01L 2348

Patent

active

052123960

ABSTRACT:
A COM switching device includes an n.sup.+ -type layer formed on a p.sup.+ -type layer, p.sup.+ -type regions formed in the surface areas of an n.sup.- -type layer formed on the n.sup.+ -type layer, n.sup.+ -type regions formed in the surface areas of the p.sup.+ -type regions, and a gate electrode formed on an insulating layer over the surface areas of the p.sup.+ -type regions which lie between the n.sup.+ -type regions and the n.sup.- -type layer. The n.sup.+ -type layer is formed such that the amount of impurities per unit area is between 5.times.10.sup.13 cm.sup.-2 and 1.times.10.sup.15 cm.sup.-2, and the p.sup.+ -type layer is formed to have an impurity concentration between 2.times.10.sup.18 and 8.times.10.sup.18 cm.sup.-3.

REFERENCES:
patent: 3324359 (1967-06-01), Gentry
patent: 4219832 (1980-08-01), Naito et al.
patent: 4243999 (1981-06-01), Azuma et al.
patent: 4364073 (1982-12-01), Becke et al.
patent: 4502070 (1985-02-01), Leipold et al.
patent: 4689647 (1987-08-01), Nakagawa et al.
patent: 4713679 (1987-12-01), Terasawa et al.
patent: 4767722 (1988-08-01), Blanchard
patent: 4799095 (1989-01-01), Baliga
patent: 4811072 (1989-03-01), Risberg
patent: 4821095 (1989-04-01), Temple
"Newest Semiconductor Technology", 1971, Dec. 5, p. 250, FIG. 1.
Semiconductor devices physics and technology, Jan. 1985, Chapter 2, p. 38, by S. M. Sze.

Affiliated with

Also associated with

Rating

Conductivity modulated field effect transistor with optimized an does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Conductivity modulated field effect transistor with optimized an, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Conductivity modulated field effect transistor with optimized an will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-806303