Conductivity modulated field effect switch with optimized anode

Details Conductivity modulated field effect switch with optimized anode Conductivity modulated field effect switch with optimized anode

1986-04-30

1987-08-25

Clawson, Jr., Joseph E.

357 38, 357 43, 357 86, 357 15, H01L 2978

Patent

active

046896473

ABSTRACT:
A COM switching device includes an n.sup.+ -type layer formed on a p.sup.+ -type layer, p.sup.+ -type regions formed in the surface areas of an n.sup.- -type layer formed on the n.sup.+ -type layer, n.sup.+ -type regions formed in the surface areas of the p.sup.+ -type regions, and a gate electrode formed on an insulating layer over the surface areas of the p.sup.+ -type regions which lie between the n.sup.+ -type regions and the n.sup.- -type layer. The n.sup.+ -type layer is formed such that the amount of impurities per unit area is 5.times.10.sup.13 cm.sup.-2 or more.

REFERENCES:
patent: 3324359 (1967-06-01), Gentry
patent: 4054893 (1977-10-01), Hutson
patent: 4275408 (1981-06-01), Yukimoto
patent: 4364073 (1982-12-01), Becke et al.
L. Goldmann et al., "Lead-Indium For Joining A Semiconductor Chip To A Substrate," IBM Tech. Discl. Bull., vol. 16 #11, Apr. 1974, pp. 3610-3611.
B. Baliga et al., "Improving Reverse Recovery . . .," Solid-State Electronics, vol. 26, #12, 1983, pp. 1133-1141.
"The Insulated Gate Rectifier" B. J. Baliga et al. 1982 IEEE IEDM Technical Digest, pp. 264-267, Dec. 1982.

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