Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-06-21
2005-06-21
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S211000, C257S700000, C257S759000, C257S760000, C257S776000, C257S786000
Reexamination Certificate
active
06909187
ABSTRACT:
A conductive wiring layer structure, applied to the conductive wiring layer structure under bonding pads of a die. The die has a substrate and can be partitioned into a central core circuit and a peripheral bonding pad area. The conductive wire layer structure has a plurality of trapezium conductive wiring regions and a plurality of inverse trapezium conductive wiring regions alternately arranged in the bonding pad area. Each of the equilateral and inverse trapezium conductive wiring regions has a plurality of dielectric layers and a plurality of conductive wiring layers alternately overlaying each other on the substrate. The conductive wiring layers of the trapezium conductive wiring region are wider as approaching the substrate, and become narrower as distant away from the substrate. The conductive wiring layers of the inverse trapezium conductive wiring region are narrower as approaching the substrate, and wider as distant away from the substrate.
REFERENCES:
patent: 5760429 (1998-06-01), Yano et al.
patent: 5998872 (1999-12-01), Kim et al.
Chang Kenny
Liaw Yuangtsang
Tsai Hung-Yin
Huynh Andy
Jianq Chyun IP Office
Via Technologies Inc.
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