Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-02-08
2005-02-08
Lee, Eddie (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S758000, C257S531000, C257S296000, C257S306000, C257S532000, C257S624000, C257S528000, C257S760000, C257S664000, C438S118000, C336S180000
Reexamination Certificate
active
06853079
ABSTRACT:
The radio frequency (RF) impedance of a metal trace at gigahertz frequencies is reduced by forming the metal trace to have a base region and a number of fins that extend away from the base region. When formed in a spiral configuration having a number of loops, the metal trace forms an inductor with an increased quality factor (Q).
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Drury Robert
Hopper Peter J.
Hwang Kyuwoon
Johnson Peter
Mian Michael
Im Junghwa
Lee Eddie
National Semiconductor Corporation
Pickering Mark C.
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