Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-05-31
2005-05-31
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S059000, C257S770000
Reexamination Certificate
active
06900461
ABSTRACT:
A semiconductor device1obtained by depositing, on a substrate2, a gate electrode4formed by a conductive thin film containing Mo atoms and Ag atoms, a gate insulating film6, an α-Si:H(i) film8, a channel protection layer10, an α-Si:H(n) film12, a source/drain electrode14formed by a conductive thin film containing Mo atoms and Ag atoms, a source/drain insulating film16, and a drive electrode18. By using a conductive thin film containing Mo atoms and Ag atoms, the gate electrode4and the source/drain electrode14are formed to manufacture the semiconductor device1. Thus, the conductive thin film for a semiconductor device, having high adhesion strength to a substrate, an insulating layer, and the like, a semiconductor device which operates stably without deteriorating the performance, and a method of efficiently manufacturing the conductive thin film and the semiconductor device can be provided.
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Inoue Kazuyoshi
Matsuzaki Shigeo
Idemitsu Kosan Co. Ltd.
Nguyen Thinh T
Parkhurst & Wendel L.L.P.
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