Conductive structures including titanium-tungsten base layers

Details Conductive structures including titanium-tungsten base layers Conductive structures including titanium-tungsten base layers

2007-06-20

2009-06-23

Sarkar, Asok K (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S741000, C257S773000, C257S774000, C257SE23019

Reexamination Certificate

active

07550849

ABSTRACT:
Methods may be provided for forming an electronic device including a substrate, a conductive pad on the substrate, and an insulating layer on the substrate wherein the insulating layer has a via hole therein exposing a portion of the conductive pad. In particular, a conductive structure may be formed on the insulating layer and on the exposed portion of the conductive pad. The conductive structure may include a base layer of titanium-tungsten (TiW) and a conduction layer of at least one of aluminum and/or copper. Moreover, the base layer of the conductive structure may be between the conduction layer and the insulating layer. Related devices are also discussed.

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International Search Report and The Written Opinion for PCT/US2004/022949; mailing date: Jan. 25, 2005.

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