Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1995-05-26
1997-02-04
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257412, 257755, 257757, H01L 29786
Patent
active
056001533
ABSTRACT:
A semiconductor processing method of forming a conductive polysilicon line relative to a substrate includes, a) providing a line of silicon on a substrate, the line having an outer top surface and outwardly exposed opposing outer sidewall surfaces, the line ultimately comprising conductively doped polysilicon; b) masking the line outer top surface with a masking material; c) with the masking material in place, depositing a metal layer atop the substrate and over the masking material and the outwardly exposed line outer sidewall surfaces; d) annealing the line to impart a silicidation reaction between the metal and opposing silicon sidewalls to form opposing metal silicide runners extending along the line sidewalls, the masking material preventing a silicidation reaction from occurring between the metal and line outer top surface; and e) stripping the metal layer from atop the line. Such a line is preferably used as a bottom gate for a thin film transistor. The invention also includes conductive polysilicon lines and thin film transistors.
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S. Wolf et al., "Silicon Processing for the VSLI Era", vol. I, 1986, pp. 397-399, 179-180 no month.
S. Wolf, "Silicon Processing for the VLSI Era", vol. II, 1992, pp. 144-147, 150-152, 358-359 no month.
Translation of Japanese Appn. No. 60-37124 (Feb. 1985); "Semiconductor Device".
Crane Sara W.
Hardy David B.
Micro)n Technology, Inc.
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