1987-11-04
1989-11-14
James, Andrew J.
357 37, 357 38, H01L 2978
Patent
active
048811203
ABSTRACT:
A conductivity modulated MOSFET, having a semiconductor substrate of a first conductivity type, a semiconductor layer of a second conductivity type formed on the semiconductor substrate and having a high resistance, a base layer of the first conductivity type formed in the semiconductor layer, a source layer of the second conductivity type formed in the base layer, a gate electrode formed on a gate insulating film which is formed on a channel region, the channel region being formed in a surface of the base layer between the semiconductor layer and the source layer, a source electrode ohmic-contacting the source layer and the base layer, and a drain electrode formed on the surface of the semiconductor substrate opposite to the semiconductor layer, characterized in that the conductivity modulated MOSFET has a saturation current smaller than a latch-up current when a predetermined gate voltage is applied to the gate electrode.
REFERENCES:
patent: 4072975 (1978-02-01), Ishitani
patent: 4364073 (1982-12-01), Becke et al.
patent: 4589004 (1986-05-01), Yasuda et al.
patent: 4672407 (1987-06-01), Nakagawa et al.
patent: 4680604 (1987-07-01), Nakagawa et al.
patent: 4689647 (1987-08-01), Nakagawa et al.
"25 Amp, 500 Volt Insulated Gate Transistors," M. F. Chang et al., 1983 IEEE IEDM Tech. Digest, pp.83-86.
Goodman et al., "Improved COMFETs with Fast Switching Speed and High-Current Capability" pp. 79-82 1983 IEEE IEDM.
Nakagawa Akio
Ohashi Hiromichi
Thukakoshi Thuneo
Watanabe Kiminori
Yamaguchi Yoshihiro
Crane Sara W.
James Andrew J.
Kabushiki Kaisha Toshiba
LandOfFree
Conductive modulated MOSFET does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Conductive modulated MOSFET, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Conductive modulated MOSFET will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1855756