Conductive metal-filled substrates via developing agents

Details Conductive metal-filled substrates via developing agents Conductive metal-filled substrates via developing agents

1990-06-11

1993-10-12

Lieberman, Paul

Compositions

Electrically conductive or emissive compositions

Free metal containing

252513, 419 10, 419 31, 419 34, 419 57, 427337, H01B 100, H01B 102, H01B 120, H01B 122

Patent

active

052522555

ABSTRACT:
A conductive metal-filled substrate is formed by intermingling copper or nickel particles into the substrate, contacting the metal particles with a specified developing agent, and heating the metal particles and the developing agent. The filled substrates are electrically conductive and are useful for a variety of uses such as EMI shielding.

REFERENCES:
patent: 4705647 (1987-11-01), Yamaguchi et al.
patent: 4830779 (1989-05-01), Maeno et al.
patent: 4997674 (1991-03-01), Parr et al.

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