Conductive memory stack with sidewall

Details Conductive memory stack with sidewall Conductive memory stack with sidewall

2007-03-06

2007-03-06

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S238000, C438S382000, C438S385000, C438S785000

Reexamination Certificate

active

10605977

ABSTRACT:
A conductive memory stack is provided. The memory stack includes a bottom electrode, a top electrode and a multi-resistive state element. The multi-resistive state element is sandwiched between the electrodes such that the top face of the bottom electrode is in contact with the multi-resistive state element's bottom face and the bottom face of the top electrode is in contact with the multi-resistive state element's top face. The bottom electrode, the top electrode and the multi-resistive state element all have sides that are adjacent to their faces. Furthermore, the sides are at least partially covered by a sidewall layer.

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