Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2008-05-06
2010-12-21
Fahmy, Wael M (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S513000, C257SE29020, C257SE29108
Reexamination Certificate
active
07855428
ABSTRACT:
The invention relates to a design structure, and more particularly, to a design structure for a conductive liner for rad hard total dose immunity and a structure thereof. The structure includes at least one shallow trench isolation structure having oxide material and formed in an SOI. A dielectric liner is formed at an interface of the SOI within the at least one shallow trench isolation structure. A metal or metal alloy layer is formed in the at least one shallow trench isolation structure and between the dielectric liner and the oxide material.
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Dennard Robert H.
Hakey Mark C.
Horak David V.
Mehta Sanjay
Fahmy Wael M
International Business Machines - Corporation
Kalam Abul
Kotulak Richard
Roberts Mlotkowski Safran & Cole P.C.
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