Conductive layer connection structure of semiconductor device

Details Conductive layer connection structure of semiconductor device Conductive layer connection structure of semiconductor device

1993-03-01

1994-12-20

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257752, 257763, 257773, H01L 2940, H01L 2960, H01L 2962

Patent

active

053748492

ABSTRACT:
A difference in level between a tungsten film and a barrier metal film is inevitably caused by the formation of barrier metal film and tungsten film in a through-hole. A tungsten film is formed to eliminate this difference in level. Tungsten film is embedded in an opening region surrounded by the sidewall of through-hole, an upper surface of barrier metal film and an upper surface of tungsten film. Therefore, the connection between an aluminum film and tungsten film cannot be broken by the expansion of the air in the space portion even through the step involving heat treatment.

REFERENCES:
patent: 5084413 (1992-01-01), Fujita et al.
R. de Werdt et al., "A 1M SRAM with Full CMOS Cells Fabricated in A 0.7 .mu.M Technology", 25.1, IEDM 532-535, 1987, Philips Research Laboratories, The Netherlands.
"Magnetically-Enhanced Etching for Tungsten Contact Plug Fabrication", by Angelo Selino et al, Mat. Res. Soc. Symp. Proc. VLSIV, Materials Research Society, 1990.

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