Conductive layer connection structure of a semiconductor device

Details Conductive layer connection structure of a semiconductor device Conductive layer connection structure of a semiconductor device

1995-04-19

1996-07-09

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257763, 257764, 257765, 257915, H01L 21285, H01L 2941, H01L 2943

Patent

active

055347304

ABSTRACT:
A natural oxide film formed on an impurity region exposed in the formation of a through-hole is reduced by a titanium silicide layer formed by a CVD method. The natural oxide film is reduced at the time of forming the titanium silicide film. The silicon used for forming the titanium silicide film is supplied from a gas including silicon. Therefore, the titanium silicide film can be prevented from intruding excessively into the impurity region.

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