Compositions – Barrier layer device compositions – Group iii element containing binary compound; e.g. – ga – as
Patent
1992-11-17
2000-01-04
Kunemund, Robert
Compositions
Barrier layer device compositions
Group iii element containing binary compound; e.g., ga, as
148 331, 117 81, 117 82, 117 83, 117954, C30B 2942
Patent
active
060106387
ABSTRACT:
A composition of matter comprising a bulk material of uniform composition having first and second spaced apart surface regions and a dopant in the bulk material of progressively increasing concentration in a direction from the first to said second surface regions providing an interface intermediate the first and second surface regions wherein the portion of the bulk material on one side of the interface is electrically conductive and the portion of the bulk material on the other side of the interface is relatively electrically insulative. The bulk material is one of Ge, Si, group II-VI compounds and group III-V compounds and preferably GaAs or GaP. The dopant is a shallow donor for the bulk material involved and for GaAs and GaP is Se, Te or S. The ratio of the resistivity of the portion of the bulk material on one side of the interface to the portion of the bulk material on the other side of the interface is at least about 1:10.sup.7.
REFERENCES:
patent: 3496118 (1970-02-01), Willardson et al.
patent: 4840699 (1989-06-01), Khattak et al.
patent: 4853077 (1989-08-01), Lambert et al.
patent: 4999082 (1991-03-01), Kremer et al.
patent: 5131975 (1992-07-01), Bourret-Courchesne
Chang et al "Radial Segregation Induced by Natural Convection .", Journal of Crystal Growth, vol. 63 (No. 2) pp. 343-364 Oct. 1983.
Kunemund Robert
Raytheon Company
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