Conduction system for thin film and hybrid integrated circuits

Chemistry: electrical and wave energy – Processes and products

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204 40, 428635, 428636, 428660, C25D 502, C25D 510

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active

040160505

ABSTRACT:
A metallization scheme for interconnection of elements in thin film and hybrid circuits is described. A thin layer of titanium is first formed, preferably by evaporation or sputtering, on the surface of the insulating substrate. A thin layer of copper is then formed in the same manner over the titanium layer. This is followed by electroplating of copper to a desired thickness onto selected portions of the Ti-Cu multilayer. Successive layers of nickel and gold are then selectively electroplated onto the plated copper regions. An additional layer of palladium may also be included between the titanium and copper layers for improved adhesion. The Ti-Cu-Ni-Au metallization system has been found unusually compatible with the major processing requirements of thin film circuits, for example, thermocompression bonding, soldering, via-hole coverage and resistor stabilization.

REFERENCES:
patent: 3287612 (1966-11-01), Lepselter
patent: 3576415 (1971-04-01), Gwyn, Jr.
patent: 3576722 (1971-04-01), Fennimore et al.
Mino et al., "Laser Cut Microwave Thin Film Circuits," Solid State Technology, Aug. 1974, pp. 37-40.
Antler, "Gold-Plated Contacts: Effect of Heating on Reliability," Plating, vol. 57, pp. 615-618 (June 1970).

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