Patent
1989-10-10
1990-04-24
James, Andrew J.
357 15, H01L 2702
Patent
active
049203991
ABSTRACT:
Disclosed is an integrated transistor structure having increased conductance and operating speed including a complementary insulated gate field-effect transistor pair, each including a source and drain region with a gate contact positioned therebetween, an ohmic contact to the source regions, and a Schottky contact to each of the drain regions. The dopant concentration of the drain regions is sufficiently low to prevent the Schottky contact from forming an ohmic contact with the drain regions. The gates of the two transistors are interconnected and function as the input terminal, and the two Schottky contacts are interconnected as the output of the device. The operation of the device is such that the lightly-doped drain regions act as bases of bipolar transistors, with the emitters formed by the Schottky diodes. Minority and majority carriers injected by the Schottky diodes modulate the channel regions, thereby lowering their resistivity and increasing the transconductance of the device without increasing the physical size or the capacitance of the device and thereby improving the speed of the device.
REFERENCES:
patent: 4256515 (1981-03-01), Miles et al.
patent: 4336550 (1982-06-01), Medwin
patent: 4485550 (1984-12-01), Koeneke et al.
James Andrew J.
Linear Integrated Systems, Inc.
Prenty Mark
LandOfFree
Conductance-modulated integrated transistor structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Conductance-modulated integrated transistor structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Conductance-modulated integrated transistor structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-37527